VTE1295 - GaAlAs Infrared Emitting Diodes

Description

This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.

PerkinElmer Optoelectronics

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Datasheet Details

Part number	VTE1295
Manufacturer	PerkinElmer Optoelectronics
File Size	27.96 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1295 Datasheet
Additional preview pages of the VTE1295 datasheet.

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1295 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°. This device is a UL recognized component for smoke alarm applications (UL file #S3506). ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.

Published: Apr 17, 2005 |