VTT1016
DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE10xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.)
-40°C to 110°C -40°C to 110°C 250 m W 3.12 m W/°C 200 m A 260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current l C m A Min. VTT1015 VTT1016 VTT1017 0.4 1.0 2.5 Max.
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- H fc (m W/cm2) VCE = 5.0 V 100 (5) 100 (5) 100 (5) Dark Current l CEO H=0 (n A) Max. 25 25 25 VCE (Volts) 20 20 10 Collector Breakdown VBR(CEO) l C = 100 µA H=0 Volts, Min. 40 30 20 Emitter...
