DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. These devices are spectrally matched to the VTE10xx series of IREDs. ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.12 mW/°C 200 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT1015 VTT1016 VTT1017 0.4 1.0 2.5 Max. — — — H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 25 25 25 VCE (Volts) 20 20 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 40 30 20 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ.
PerkinElmer Optoelectronics