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2N1711 - NPN medium power transistor

General Description

NPN medium power transistor in a TO-39 metal package.

Fig.1 Simplified outline (TO-39) and symbol.

Key Features

  • High current (max. 500 mA).
  • Low voltage (max. 50 V).

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
2N1613 NPN medium power transistor
2N1893 NPN medium power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 50 V). APPLICATIONS • DC and wideband amplifiers. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N1711 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol.