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2N1711 Datasheet NPN Medium Power Transistor

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips.

General Description

NPN medium power transistor in a TO-39 metal package.

1 handbook, halfpage 2 2N1711 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA;

Key Features

  • High current (max. 500 mA).
  • Low voltage (max. 50 V).

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