| Part number | 2N1711 |
|---|---|
| Download | 2N1711 Datasheet (PDF) |
| File Size | 51.38 KB |
| Manufacturer | Philips Semiconductors |
| Description | NPN medium power transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Microsemi |
2N1711 | NPN LOW POWER SILICON TRANSISTOR |
STMicroelectronics |
2N1711 | SWITCHES AND UNIVERSAL AMPLIFIERS |
VPT Components |
2N1711 | NPN Low Power Silicon Transistor |
Comset Semiconductor |
2N1711 | Silicon Planar Epitaxial Transistors |
Motorola Semiconductor |
2N1711 | GENERAL PURPOSE TRANSISTOR |
NPN medium power transistor in a TO-39 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; f = 100 MHz open base CONDITIONS open emitter − − − − 100 70 MIN.
