2N1711 Datasheet | Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor Features - High current (max. 500 mA) - Low voltage (max. 50 V). APPLICATIONS - DC and wideband amplifiers. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER...