2N1711 datasheet by Philips Semiconductors (now NXP Semiconductors).
| Part number | 2N1711 |
|---|---|
| Datasheet | 2N1711_PhilipsSemiconductors.pdf |
| File Size | 51.38 KB |
| Manufacturer | Philips Semiconductors (now NXP Semiconductors) |
| Description | NPN medium power transistor |
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NPN medium power transistor in a TO-39 metal package. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 150 mA; f = 100 MHz open base CONDITIONS open emitter − − − − 100 70 MIN.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N1711 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
 |
2N1711 | SWITCHES AND UNIVERSAL AMPLIFIERS | STMicroelectronics |
 |
2N1711 | NPN Low Power Silicon Transistor | VPT |
 |
2N1711 | Silicon Planar Epitaxial Transistors | Comset Semiconductor |
 |
2N1711 | GENERAL PURPOSE TRANSISTOR | Motorola |
View all Philips Semiconductors (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N1613 | NPN medium power transistor |
| 2N1893 | NPN medium power transistor |
