Philips 2N2369
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | 2N2369 |
|---|---|
| Datasheet | 2N2369 Download |
| Manufacturer |  Philips |
| Description | NPN switching transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 200 mA)● Low voltage (max. 15 V).
APPLICATIONS
● High-speed switching● VHF amplification. handbook, halfpage 1 2N2369 PINNING PIN 1 2 3 emitter base collector, connected to case
DESCRIPTION
3 2DESCRIPTION
NPN switching transistor in a TO-18 metal package. 3 2 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V; Tj = 25 °C IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA open emitter open base CONDITIONS − − − − 40 500 − MIN. MAX. 40 15 200 360 120 − 30 MHz ns V V mA mW UNIT 1997 Jun 20 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg...
