74HCT1G00 Datasheet | Philips Semiconductors

FEATURES - Wide operating voltage: 2.0 to 6.0 V - Symmetrical output impedance - High noise immunity - Low power dissipation - Balanced propagation delays - Very small 5 pins package - Output capability: standard. CPD DESCRIPTION The 74HC1G/HCT1G00 is a high speed Si-gate CMOS device. The 74HC1G/HCT1G00 provides the 2-input NAND function. The standard output currents are 1⁄2 pared to the 74HC/HCT00. FUNCTION TABLE See note 1. INPUTS in A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. in B L H L H OUTPUT out Y H H H L PINNING PIN 1 2 3 4 5 SYMBOL in B in A GND out Y VCC DESCRIPTION data input B data input A ground (0 V) data output Notes CI QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns 74HC1G00; 74HCT1G00 TYPICAL SYMBOL t PHL/t PLH PARAMETER propagation delay in A, in B to out Y input capacitance power dissipation capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 p F; VCC = 5 V 7 HCT1G 10 ns UNIT 1.5 19 1.5 21 p F p F 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage in V; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V. DC supply voltage 1998 Jul 30 Philips Semiconductors Product specification 2-input NAND gate ORDERING INFORMATION 74HC1G00; 74HCT1G00 PACKAGES OUTSIDE NORTH AMERICA 74HC1G00GW 74HCT1G00GW TEMPERATURE RANGE - 40 to +125 °C PINS 5 5 PACKAGE SC-88A SC-88A MATERIAL plastic plastic CODE SOT353 SOT353 MARKING HA TA handbook, halfpage in B 1 in A 2 GND 3 MNA096 5 VCC handbook, halfpage 1 2 in B in A out Y 4 out Y MNA097 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage handbook, halfpage 1 2 in B out Y in A MNA099 & MNA098 Fig.3 IEC logic...