74HCT1G66
Key Features
- Wide operating voltage range: 2.0 to 9.0 V
- Very low ON resistance 45 Ω (TYP.) at VCC = 4.5 V 30 Ω (TYP.) at VCC = 6.0 V 25 Ω (TYP.) at VCC = 9.0 V
- High noise immunity
- Low power dissipation
- Very small 5 pins package
- Output capability: non standard. DESCRIPTION The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G66 provides an analog switch. The switch has two input/output terminals (Y, Z) and an active HIGH enable input (E). When E is LOW, the analog switch is turned off. The non standard output currents are equal compared to the 74HC/HCT4066. FUNCTION TABLE INPUTS L H Note
- H = HIGH voltage level; L = LOW voltage level. E(1) SWITCH OFF ON PINNING PIN 1 2 3 4 5 SYMBOL Y Z GND E VCC CS Notes QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns. 74HC1G66; 74HCT1G66 TYP. SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD PARAMETER turn-on time E to Vos turn-off time E to Vos input capacitance power dissipation capacitance max. switch capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF RL = 1 kΩ VCC = 5 V 11 11 1.5 9 HCT1G 12 12 1.5 9 ns ns pF pF UNIT 8 8 pF
- CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ∑ ((CL +CS)× VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = max. switch capacitance in pF; VCC = supply voltage in V; ∑ ((CL +CS)× VCC2 × fo) = sum of outputs.
- For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V.
