Philips BC857
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 65 V).
APPLICATIONS
● General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. MARKING TYPE NUMBER BC856 BC856A BC856B BC857 MARKING CODE(1) 3D∗ 3A∗ 3B∗ 3H∗ TYPE NUMBER BC857A BC857B BC857C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 3E∗ 3F∗ 3G∗ handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage BC856 BC857 collector-emitter voltage BC856 BC857 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1.