BGW211 Datasheet | Philips Semiconductors

features - Advanced, single-package WLAN 802.11g optimized for mobile handheld devices - No RF-critical design required - Low total cost of ownership - Lowest-power consumption in standby (< 2 m W) and operating modes (PA, RF, baseband/MAC) - Ultra-small form factor - Low-profile 68-pin HVQFN-like Si P package (10 x 15 x 1.3 mm) - No external ponents required - Ideal mobile architecture - No WLAN related processor load in all operating modes - Integrated ARM7 controller with associated memories - prehensive Qo S - All mandatory 802.11e features , plus DLS, Block ACK, APSD - Optimized for real-time applications with minimal system power consumption - Co-exists with Bluetooth ® needed for a plete 802.11g WLAN subsystem to be contained in a single, low-profile HVQFN package that measures only 10 x 15 x 1.3 mm. The Si P contains the industry’s first 90-nm CMOS 802.11g baseband/MAC and a silicon-germanium Bi CMOS radio transceiver. Unlike other “one-chip” solutions, which require the use of external receive LNAs, transmit power amplifiers, and/or additional ponents, the BGW211 Si P requires no external ponents to meet the range and throughput performance requirements of mobile handsets and network operators. By providing plete system functionality in a single package, the Si P format delivers quicker design cycles, reduces risk, simplifies manufacturing, and reduces the bill of materials. Also, because the Si P offers fully tested functionality, it lets the customer’s development team focus their energy on innovative product design instead of the plex issues related to RF layout. - Seamless upgrade path from BGW200 802.11b Si P - plete software drivers, utilities, and diagnostic tools BGW211 Low-power WLAN Si P plete, single-package 802.11g solution for mobile phones & portable consumer devices Semiconductors App...