Philips MMBTA42
This data sheet contains the design target or goal specifications for product development. This data sheet contains preliminary data, and supplementary data will be published at a later date.| Part No. | MMBTA42 |
|---|---|
| Datasheet | MMBTA42 Download |
| Manufacturer |  Philips |
| Description | NPN high-voltage transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 100 mA)● High voltage (max. 300 V).
APPLICATIONS
● Telephony● Professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package. PNP complement: MMBTA92. MARKING 1 2 handbook, halfpage MMBTA42 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 TYPE NUMBER MMBTA42 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made in Malaysia. MARKING CODE(1) 7D∗ Top view MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
