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MZ0912B100Y - NPN microwave power transistors

General Description

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells.

It is recommended for new designs.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry improves power sharing and low thermal resistance.
  • Input and output matching cell allows an easier design of circuits.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

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MZ0912B50Y NPN microwave power transistor

Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS • Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.