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MZ0912B100Y

Manufacturer: Philips Semiconductors (now NXP Semiconductors)

MZ0912B100Y datasheet by Philips Semiconductors (now NXP Semiconductors).

MZ0912B100Y datasheet preview

MZ0912B100Y Datasheet Details

Part number MZ0912B100Y
Datasheet MZ0912B100Y_PhilipsSemiconductors.pdf
File Size 98.88 KB
Manufacturer Philips Semiconductors (now NXP Semiconductors)
Description NPN microwave power transistors
MZ0912B100Y page 2 MZ0912B100Y page 3

MZ0912B100Y Overview

NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is remended for new designs.

MZ0912B100Y Key Features

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry improves power sharing and low thermal resistance
  • Input and output matching cell allows an easier design of circuits
Philips Semiconductors (now NXP Semiconductors) logo - Manufacturer

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Part Number Description
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MZ0912B100Y Distributor

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