Philips MZ0912B100Y
The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.| Part No. | MZ0912B100Y |
|---|---|
| Datasheet | MZ0912B100Y Download |
| Manufacturer |  Philips |
| Description | NPN microwave power transistors |
| Buy | Stock & Price |
FEATURES
● Interdigitated structure provides high emitter efficiency● Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
● Gold metallization realizes very stable characteristics and excellent lifetime
● Multicell geometry improves power sharing and low thermal resistance
● Input and output matching cell allows an easier design of circuits.
APPLICATIONS
● Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.DESCRIPTION
NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs. olumns MX0912B100Y; MZ0912B100Y PINNING PIN 1 2 3 collector emitter base connected to flangeDESCRIPTION
1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol (SOT439A). handbook, halfpage 1 c b 3 e 2 Top view MAM314 Fig.2 Simplified outline and symbol (SOT443A). QUICK REFERENCE DATA Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplifier.
