MZ0912B100Y - NPN microwave power transistors

Description

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells.

It is recommended for new designs.

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry improves power sharing and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

Philips

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Datasheet Details

Part number	MZ0912B100Y
Manufacturer	Philips
File Size	98.88 KB
Description	NPN microwave power transistors
Datasheet	MZ0912B100Y Datasheet
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MZ0912B50Y - NPN microwave power transistor

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DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product speciﬁcation Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product speciﬁcation NPN microwave power transistors FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS • Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.

Published: May 12, 2005 |