• Part: MZ0912B100Y
  • Description: NPN microwave power transistors
  • Manufacturer: Philips Semiconductors
  • Size: 98.88 KB
Download MZ0912B100Y Datasheet PDF
Philips Semiconductors
MZ0912B100Y
MZ0912B100Y is NPN microwave power transistors manufactured by Philips Semiconductors.
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors Features - Interdigitated structure provides high emitter efficiency - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry improves power sharing and low thermal resistance - Input and output matching cell allows an easier design of circuits. APPLICATIONS - mon base class-C broadband pulse power amplifiers...