Philips MZ0912B50Y
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.| Part No. | MZ0912B50Y |
|---|---|
| Datasheet | MZ0912B50Y Download |
| Manufacturer |  Philips |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Interdigitated structure provides high emitter efficiency● Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
● Gold metallization realizes very stable characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance
● Input and output matching cell allows an easier design of circuits.
APPLICATIONS
Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in common base configuration, and specified in class C. handbook, halfpage MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION Class C; tp = 10 µs; δ = 1% f (GHz) VCC (V) PL (W) >50 Gp (dB) >7 ηC (%) >42 Zi/ZL (Ω) see Figs 6 and 7 0.960 t...
