MZ0912B50Y Datasheet | Philips Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor Features - Interdigitated structure provides high emitter efficiency - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance - Input and output matching cell allows an easier design of circuits. APPLICATIONS mon base, class C, broadband, pulse power...