MZ0912B50Y Overview
NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange. It is mounted in mon base configuration, and specified in class C. handbook, halfpage MZ0912B50Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon base class C broadband amplifier.
MZ0912B50Y Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input and output matching cell allows an easier design of circuits
MZ0912B50Y Applications
- SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di