MZ0912B50Y - NPN microwave power transistor

Description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with base connected to flange.

It is mounted in common base configuration, and specified in class C.

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell allows an easier design of circuits.

Philips

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Datasheet Details

Part number	MZ0912B50Y
Manufacturer	Philips
File Size	90.73 KB
Description	NPN microwave power transistor
Datasheet	MZ0912B50Y Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product speciﬁcation NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits. APPLICATIONS Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.

Published: May 12, 2005 |