PMBD6100 Datasheet | Philips Semiconductors

FEATURES - Small plastic SMD package - High switching speed: max. 4 ns - General application - Continuous reverse voltage: max. 70 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 450 m A. APPLICATIONS - High-speed switching in surface mounted circuits. Top view handbook, 4 columns PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) mon cathode DESCRIPTION The PMBD6100 consists of two high-speed switching diodes with mon cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. 2 3 MAM108 Marking code: p5B = made in Hong Kong; t5B = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - - 65 - 4 1 0.5 250 +150 150 A A A m W °C °C - - - - - 85 70 215 125 450 V V m A m A m A PARAMETER CONDITIONS MIN. MAX. UNIT 1999 May 11 Philips Semiconductors Product specification High-speed double diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 m A IF = 10 m A IF = 50 m A IF = 100 m A IR reverse current see Fig.5 VR = 50 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 m A to IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.7 when switched from IF = 10 m A; tr = 20 ns; see Fig.8 - - - - 550 - - 0.85 PARAMETER CONDITIONS...