PMBFJ211 Datasheet | Philips Semiconductors

FEATURES - High speed switching - Interchangeability of drain and source connections - High impedance. APPLICATIONS - Analog switches - Choppers, multiplexers and mutators - Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PMBFJ210; PMBFJ211; PMBFJ212 PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage 3 d s g 1 Top view MAM385 Marking codes: PMBFJ210: M68. PMBFJ211: M69. PMBFJ212: M70. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage PMBFJ210 PMBFJ211 PMBFJ212 IDSS drain current PMBFJ210 PMBFJ211 PMBFJ212 Ptot yfs total power dissipation mon-source transfer admittance PMBFJ210 PMBFJ211 PMBFJ212 Tamb ≤ 25 °C VGS = 0; VDS = 15 V 4 6 7 12 12 12 m S m S m S VGS = 0; VDS = 15 V 2 7 15 - 15 20 40 250 m A m A m A m W ID = 1 n A; VDS = 15 V - 1 - 2.5 - 4 - 3 - 4.5 - 6 V V V CONDITIONS - MIN. MAX. ±25 UNIT V 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient; note 1 VALUE 500 UNIT K/W PARAMETER drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb ≤ 25 °C; note 1; see Fig.13 open drain open source CONDITIONS - - - - - - 65 - MIN. MAX. ±25 - 25 - 25 10 250 150 150 V V V m A m W...