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PMBFJ212 - N-channel field-effect transistors

General Description

N-channel symmetrical junction field-effect transistor in a SOT23 package.

CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.

Key Features

  • High speed switching.
  • Interchangeability of drain and source connections.
  • High impedance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.