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PMBS3904 - NPN Transistor

General Description

NPN transistor in a plastic SOT23 package.

PNP complement: PMBS3906.

1.

= p : Made in Hong Kong.

= t : Made in Malaysia.

= W : Made in China.

Key Features

  • Low current (max. 100 mA).
  • Low voltage (max. 40 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PMBS3904 NPN general purpose transistor Product data sheet Supersedes data of 1999 Apr 22 2004 Feb 02 NXP Semiconductors NPN general purpose transistor Product data sheet PMBS3904 FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. MARKING TYPE NUMBER PMBS3904 MARKING CODE(1) *O4 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol.