PMBS3906 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 40 V). APPLICATIONS - General purpose switching and amplification, e.g. telephony and professional munication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN plement: PMBS3904. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMBS3906 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗O6 Top view 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 40 - 40 - 5 - 100 - 200 - 200 250 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 22 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 30 V IC = 0; VEB = - 5 V VCE = - 1 V; (see Fig.2) IC = - 0.1 m A IC = - 1 m A IC = - 10 m A IC = - 50 m A; note 1 IC = - 100 m A; note 1 VCEsat VBEsat Cc Ce f T F collector-emitter saturation voltage IC = - 10 m A; IB = - 1 m A IC...