PMST2222 Datasheet | Philips Semiconductors

FEATURES - High current (max. 600 m A) - Low voltage (max. 40 V). APPLICATIONS - High-speed switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT323 plastic package. PNP plement: PMST2907A. MARKING TYPE NUMBER PMST2222 PMST2222A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1B ∗1P handbook, halfpage PMST2222; PMST2222A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 2 1 Top view 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST2222 PMST2222A VCEO collector-emitter voltage PMST2222 PMST2222A VEBO emitter-base voltage PMST2222 PMST2222A IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector - - - - - - - 65 - - 65 5 6 600 800 200 200 +150 150 +150 V V m A m A m A m W °C °C °C open base - - 30 40 V V CONDITIONS open emitter - - 60 75 V V MIN. MAX. UNIT 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST2222 collector cut-off current PMST2222A IEBO h FE collector cut-off current DC current gain PARAMETER thermal resistance from junction to ambient PMST2222; PMST2222A CONDITIONS note 1 VALUE 625 UNIT K/W CONDITIONS IE = 0; VCB = 50 V IE = 0; VCB = 50 V; Tj = 125 °C IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 °C IC = 0; VEB = 3 V IC = 0.1 m A; VCE = 10 V IC = 1 m A; VCE = 10 V IC = 10 m A; VCE = 10 V IC = 150 m A; VCE = 1 V; note 1 IC = 150 m A; VCE = 10 V; note 1 - - - - - MIN. MAX. 10 10 10 10 10 -...