PMST5550 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 300 m A) - High voltage (max. 160 V). APPLICATIONS - Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP plement: PMST5401. PINNING PIN 1 2 3 PMST5550; PMST5551 DESCRIPTION base emitter collector handbook, halfpage 3 1 MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1F ∗G3 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5550 PMST5551 VCEO collector-emitter voltage PMST5550 PMST5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 140 160 6 300 600 100 200 +150 150 +150 V V V m A m A m A m W °C °C °C CONDITIONS open emitter - - 160 180 V V MIN. MAX. UNIT 1999 Apr 29 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST5550 collector cut-off current PMST5551 IEBO h FE emitter cut-off current DC current gain PMST5550 CONDITIONS IE = 0; VCB = 100 V PARAMETER thermal resistance from junction to ambient PMST5550; PMST5551 CONDITIONS note 1 VALUE 625 UNIT K/W MIN. - - - - - 60 60 20 80 80 30 - MAX. 100 100 50 50 50 - 250 - - 250 - 150 UNIT n A µA n A µA n...