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PMST5551 - NPN Transistor

General Description

NPN high-voltage transistor in a SOT323 plastic package.

PNP complement: PMST5401.

MARKING TYPE NUMBER PMST5550 PMST5551 Note 1.

Key Features

  • Low current (max. 300 mA).
  • High voltage (max. 160 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product specification Supersedes data of 1997 May 20 1999 Apr 29 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. PINNING PIN 1 2 3 PMST5550; PMST5551 DESCRIPTION base emitter collector handbook, halfpage 3 3 1 MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol.