PN4392 Datasheet | Philips Semiconductors

DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, mutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 PN4391 to 4393 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tamb = 25 °C Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 n A Drain-source on-resistance ID = 1 m A; VGS = 0 RDS on max. 30 60 100 Ω - VGS off min. max. 4 10 2 5 0.5 V 3 V IDSS min. 50 25 5 m A Ptot max. PN4391 360 PN4392 PN4393 m W ± VDS max. 40 V RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Forward gate current (DC) Total power dissipation up to Tamb = 25 °C Storage temperature range Junction temperature Ptot Tstg Tj max. max. 360 - 65 to+150 150 m W °C °C ± VDS - VGSO - VGDO IG max. max. max. max. 40 40 40 50 V V V m A April 1989 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified PN4391 Reverse gate current - VGS = 20 V; VDS = 0 - VGS = 20 V; VDS = 0 Tamb = 100 °C Drain cut-off current - VGS = 12 V - VGS = 7 V - VGS = 5 V - VGS = 12 V - VGS = 7 V - VGS = 5 V VDS = 20 V IDSX IDSX IDSX IDSX IDSX IDSX max. max. max. max. max. max. min. max. min. min. max. max. max. max. max. 50 150 40 4.0 10 30 0.4 200 1.0 - IGSS max. 200 - IGSS max. 1.0 Rth j-a = PN4391 to 4393 K/W PN4392 1.0 200 PN4393 1.0 n A 200 n A n A 1.0 n A 1.0 n A n A VDS = 20 V; Tamb = 100 °C 200 n A 200 n A Drain saturation current VDS = 20 V; VGS = 0 Gate-source breakdown voltage - IG = 1 µA; VDS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 n A Drain-source on-resistance ID = 1 m A; VGS = 0 Drain-source...