PPC5001T Datasheet | Philips Semiconductors

FEATURES - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very stable characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance handbook, halfpage PINNING - SOT447A PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS Intended for use in mon-collector oscillator circuits in military and professional applications up to 5 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package. 2 Side view Marking code: 395 MAM331 c 1 b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in an oscillator circuit up to 5 GHz; typical values. MODE OF OPERATION Class A (CW) f (GHz) 5 VCE (V) 20 IC (m A) 200 PL (m W) 450 1997 Mar 03 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. At 0.1 mm from the case. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tamb ≤ 75 °C CONDITIONS open emitter RBE = 70 Ω open emitter open collector - - - - - - - 65 - - MIN. MAX. 40 35 16 3 0.25 4 +200 200 235 UNIT V V V V A W °C °C °C handbook, MGD975 Ptot max (W) 4 0 0 50 100 150 200 Tmb (°C) Fig.2 Power dissipation derating as a function of mounting-base temperature. 1997 Mar 03 Philips...