BB809 Datasheet | Philips Semiconductors

FEATURES - High linearity - Matched to 3% - Hermetically sealed leaded glass SOD68 (DO-34) package - C28: 4.7 p F; ratio: 9 - Low series resistance. Cathode side indicated by a yellow band on a black body. k handbook, halfpage a MAM159 APPLICATIONS - Electronic tuning in VHF television tuners, band A up to 160 MHz - VCO. DESCRIPTION The BB809 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature - - - 55 - 55 MIN. MAX. 30 20 +150 +100 V m A °C °C UNIT CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 200 MHz; note 1 VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 f = 1 MHz MIN. - - - 39 4 8 TYP. - - - - - - MAX. 10 200 0.6 46 5 10 UNIT n A n A Ω p F p F C d ( 1V ) -------------------C d ( 28V ) ∆C d --------Cd Note capacitance matching VR = 0.5 to 28 V - - % 1. VR is the value at which Cd = 25 p F. 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode GRAPHICAL...