BB804 Datasheet | Philips Semiconductors

FEATURES - Selected capacitance range - Small plastic SMD package - C8: 26 p F; ratio: 1.7 - Low series resistance. APPLICATIONS - Electronic tuning in FM radio applications. DESCRIPTION The BB804 is a variable capacitance double diode with a mon cathode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. handbook, halfpage PINNING MARKING TYPE NUMBER BB804 BB804W CODE SF5 SF2 PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) mon cathode 3 3 1 2 MAM169 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature operating junction temperature - - - 55 - 55 18 50 +150 +125 V m A °C °C PARAMETER MIN. MAX. UNIT 1998 Nov 25 Philips Semiconductors Product specification VHF variable capacitance double diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode IR rs Cd reverse current diode series resistance diode capacitance capacitance ratio VR = 16 V; see Fig.3 VR = 16 V; Tj = 60 °C; see Fig.3 f = 100 MHz; note 1 VR = 2 V; f = 1 MHz; see Figs 2 and 4 VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 C d ( 2V ) ----------------C d ( 8V ) Note 1. VR is the value at which Cd = 38 p F. f = 1 MHz - - - 42 44 1.65 - - 0.2 - - - 20 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT n A n A Ω p F p F - 46.5 45.5 1.75 1998 Nov 25 Philips Semiconductors Product specification VHF variable capacitance double...