BB804 Datasheet | Siemens Group

BB 804 Silicon Variable Capacitance Diode q q q q BB 804 For FM tuners Monolithic chip with mon cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal Hifi tuning device when used in low-distortion, back-to-back configuration Type BB 804 Ordering Code (tape and reel) Q62702-B372 Pin Configuration Marking SF (see Characteristics for marking of capacitance subgroups) Package SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 18 20 50 100 - 65 … + 150 Unit V m A ˚C K/W Semiconductor Group BB 804 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C Diode capacitance VR = 2 V, f = 1 MHz Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz Diode capacitance1) VR = 2 V, f = 1 MHz Subgroups: 0 1 2 3 4 Symbol min. IR - - CT CT2 CT8 rs Q TCC 42 1.65 - - - - - - 1.71 0.18 200 330 20 200 47.5 - - - - p F - Ω - ppm/K Values typ. max. n A Unit CT 42 43 44 45 46 - - - - - 43.5 44.5 45.5 46.5 47.5 p F 1) The capacitance subgroup is marked by the subgroup number printed on the ponent and the package label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. Semiconductor Group BB...