• Part: BB804
  • Description: Silicon Variable Capacitance Diode
  • Category: Diode
  • Manufacturer: Infineon
  • Size: 408.53 KB
Download BB804 Datasheet PDF
Infineon
BB804
BB804 is Silicon Variable Capacitance Diode manufactured by Infineon.
BB804... Silicon Variable Capacitance Diode For FM tuners Monolithic chip with mon cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal Hi Fi tuning device when used in low-distortion, back-to-back configuration D 1 D 2 Type BB804 Package SOT23 Configuration mon cathode LS(n H) Marking 1.8 SF1/2/3- - For differences see next page Capacitance groups Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V m A °C Nov-07-2002 BB804... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 65 °C AC Characteristics Diode capacitance1) VR = 2 V, f = 1 MHz CT CT2 /CT8 r S Q TCC Unit max. n A 20 200 typ. - IR - 42 1.65 - 1.71 0.18 200 330 - p F Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Figure of merit f = 100 MHz, VR = 2 V Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz 1...