LAE4001R Datasheet | Philips Semiconductors

FEATURES - Self-aligned process entirely ion implanted and gold sandwich metallization - Optimum temperature profile - Excellent performance and reliability. APPLICATIONS mon emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for patibility with stripline microwave circuits. 2 4 handbook, halfpage PINNING - SOT100 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 3 c b e MAM312 Marking code: R8. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a mon emitter class A circuit. MODE OF OPERATION CW linear amplifier f (GHz) 4 VCE (V) 15 IC (m A) 25 PL1 (m W) >85 Gpo (d B) >8.5 Zi (Ω) typ.7 + j22 ZL (Ω) typ. 10 + j38 MAINTENANCE TYPE - NOT REMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s Tcase ≤ 100 °C CONDITIONS open emitter RBE = 220 Ω open base open collector MIN. - - - - - - - 65 - - MAX. 30 25 16 2 80 480 +200 200 235 UNIT V V V V m A m W °C °C °C 102 handbook, halfpage IC (m A) MGD988 handbook, halfpage MGL069 Ptot (m W) 400 (1)...