LAE4001R - NPN microwave power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid.

A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.

Features

Self-aligned process entirely ion implanted and gold sandwich metallization.
Optimum temperature profile.
Excellent performance and reliability.

Philipss

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Datasheet Details

Part number	LAE4001R
Manufacturer	Philipss
File Size	48.46 KB
Description	NPN microwave power transistor
Datasheet	LAE4001R Datasheet
Additional preview pages of the LAE4001R datasheet.

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DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product speciﬁcation NPN microwave power transistor FEATURES • Self-aligned process entirely ion implanted and gold sandwich metallization • Optimum temperature profile • Excellent performance and reliability. APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.

Published: Apr 25, 2005 |