LAE4001R Description
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for patibility with stripline microwave circuits. Fig.1 Simplified outline and symbol.
LAE4001R Key Features
- Self-aligned process entirely ion implanted and gold sandwich metallization
- Optimum temperature profile
- Excellent performance and reliability