LAE4002S Description
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for patibility with stripline microwave circuits. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a mon emitter class A circuit.
LAE4002S Key Features
- Diffused emitter ballasting resistors
- Self-aligned process entirely ion implanted and gold sandwich metallization
- Optimum temperature profile
- Excellent performance and reliability