LAE4002S Datasheet | Philips Semiconductors

FEATURES - Diffused emitter ballasting resistors - Self-aligned process entirely ion implanted and gold sandwich metallization - Optimum temperature profile - Excellent performance and reliability. APPLICATIONS mon emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for patibility with stripline microwave circuits. 1 Marking code: R9. handbook, halfpage PINNING - SOT100 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 3 c 2 4 b e MAM312 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a mon emitter class A circuit. MODE OF OPERATION CW linear amplifier f (GHz) 4 VCE (V) 18 IC (m A) 30 PL1 (m W) >126 Gpo (d B) >7.5 Zi (Ω) typ. 4 + j23 ZL (Ω) typ. 6.5 + j32 MAINTENANCE TYPE - NOT REMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.1 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tcase ≤ 75 °C CONDITIONS open emitter RBE = 220 Ω open base open collector MIN. - - - - - - - 65 - - MAX. 40 35 16 3 90 625 +200 200 235 UNIT V V V V m A m W °C °C °C 102 handbook, halfpage MGD998 handbook, halfpage MGD997 IC (m A) Ptot (m W)...