Datasheet Details
| Part number | PJM10C30PA |
|---|---|
| Manufacturer | Ping Jing |
| File Size | 1.18 MB |
| Description | N and P-Channel Complementary Power MOSFET |
| Download | PJM10C30PA Download (PDF) |
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Overview: PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS= 4.5V ⚫ P-Channel ⚫ VDS= -30V,ID= -9A ⚫ RDS(on)< 25mΩ @VGS= -10V ⚫ RDS(on)< 40mΩ @VGS= -4.
| Part number | PJM10C30PA |
|---|---|
| Manufacturer | Ping Jing |
| File Size | 1.18 MB |
| Description | N and P-Channel Complementary Power MOSFET |
| Download | PJM10C30PA Download (PDF) |
|
|
|
Pin Description 1 Source1 4 Gate2 2 Gate1 5,6 Drain2 3 Source2 7,8 Drain1 Schematic Diagram 7, 8.Drain1 5, 6.Drain2 Marking Code 2.Gate1 4.Gate2 10C30 1.Source1 N-Channel 3.Source2 P-Channel www.pingjingsemi.com Revision：1.1 Jan-2024 1 / 11 PJM10C30PA N and P-Channel Complementary Power MOSFET Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed Note1 IDM Single Pulsed Avalanche Energy Note2 EAS Maximum Power Dissipation PD Junction Temperature TJ Storage Temperature Range TSTG N-Channel P-Channel 30 -30 ±20 12 -9 36 -30 25 42 2 150 -55 to +150 Unit V V A A mJ W °C °C Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note3 RθJA 62.5 °C/W www.pingjingsemi.com Revision：1.1 Jan-2024 2 / 11 PJM10C30PA N and P-Channel Complementary Power MOSFET N-Channel Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Static Characteristics Symbol Test Condition Min.
Typ.
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