PJM10H05NST Overview
Description
： The PJM10H05NST uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- RDS(ON) <300mΩ @ VGS=10V（Typ：200mΩ）
- VDS=100V, ID=5A
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation PJM10H05NST N-MOS VDSS ID PD RDS(ON)type 100 V 5A 3W 200 mΩ SOT-223
