PJM10H10NTE - N-Channel Enhancement Mode Power MOSFET

Features

Excellent package for good heat dissipation.
High density cell design for ultra low RDS(on).
VDS= 100V,ID= 10A RDS(on)< 120mΩ @VGS= 10V TO-252.

Ping Jing

Datasheet Details

Part number	PJM10H10NTE
Manufacturer	Ping Jing
File Size	741.70 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PJM10H10NTE Datasheet

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Full PDF Text Transcription

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PJM10H10NTE N-Channel Enhancement Mode Power MOSFET Features ⚫ Excellent package for good heat dissipation ⚫ High density cell design for ultra low RDS(on) ⚫ VDS= 100V,ID= 10A RDS(on)< 120mΩ @VGS= 10V TO-252 Applications ⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply 1. Gate 2.Drain 3.Sourse Schematic Diagram 2.Drain 1.Gate 3.Source + YW 10H10: Product code Marking code + YW Y: Year code 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 G H J K A B C D E F Weeks 1~26 27~52 53 W: Week code code A~Z a~z z Absolute Maximum Ratings Ratings at 25℃ case temperature unless otherwise specified.

Published: Aug 16, 2025 |