PJM10H10NTE Overview
PJM10H10NTE N-Channel Enhancement Mode Power MOSFET.
PJM10H10NTE Key Features
- Excellent package for good heat dissipation
- High density cell design for ultra low RDS(on)
- VDS= 100V,ID= 10A
PJM10H10NTE Datasheet Details
| Part number | PJM10H10NTE |
|---|---|
| Datasheet | PJM10H10NTE-PingJing.pdf |
| File Size | 741.70 KB |
| Manufacturer | Ping Jing |
| Description | N-Channel Enhancement Mode Power MOSFET |
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