Datasheet4U.com

PJM10H10NTE - N-Channel Enhancement Mode Power MOSFET

Product Overview

Ping Jing

📥 Download Datasheet

PJM10H10NTE N-Channel Enhancement Mode Power MOSFET by Ping Jing - Datasheet Preview — Datasheet preview – PJM10H10NTE

Datasheet Details

Part number	PJM10H10NTE
Manufacturer	Ping Jing
File Size	741.70 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PJM10H10NTE Datasheet
Additional preview pages of the PJM10H10NTE datasheet.

Product details

Features

Excellent package for good heat dissipation.
High density cell design for ultra low RDS(on).
VDS= 100V,ID= 10A RDS(on)< 120mΩ @VGS= 10V TO-252.

📁 Similar Datasheet

Other Datasheets by Ping Jing

PJM10H05NST - N-MOS
PJM10C30PA - N and P-Channel Complementary Power MOSFET
PJM03N10SQ - N-Channel MOSFET
PJM2300NSA - N-Channel MOSFET
PJM2305PSA - P-Channel Power MOSFET
PJM250N40TO - N- Enhancement Mode Field Effect Transistor

Published: Aug 16, 2025 |