PJM10H10NTE Description
PJM10H10NTE N-Channel Enhancement Mode Power MOSFET.
PJM10H10NTE Key Features
- Excellent package for good heat dissipation
- High density cell design for ultra low RDS(on)
- VDS= 100V,ID= 10A
PJM10H10NTE Datasheet
| Part number | PJM10H10NTE |
|---|---|
| Download | PJM10H10NTE Datasheet (PDF) |
| File Size | 741.70 KB |
| Manufacturer | Ping Jing |
| Description | N-Channel Enhancement Mode Power MOSFET |
|
|