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Features
⚫ TrenchFET Power MOSFET ⚫ Excellent RDS(on) and Low Gate Charge ⚫ MSL: 1 Level
Applications
⚫ Load Switch for Portable Devices ⚫ DC/DC Converter
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Symbol VDS VGS
ID
Pulsed Drain Current (Note1) Power Dissipation Junction and Storage Temperature Range Thermal Characteristics
IDM PD TJ, TSTG
Parameter Maximum Junction-to-Ambient (Note2)
Symbol RθJA
Note: 1.Repetitive rating : Pulse width limited by junction temperature. 2.Surface mounted on FR4 board, t≤10s.
PJM2300NSA N-Channel MOSFET
SOT-23
1.Gate 2.Source 3.Drain
Schematic diagram
Drain 3
1 Gate
2 Source
Marking: M02
Maximum 20 ±20 6.0 18 0.9
150, -55 to 150
Typ.