Ping Jing PJM2300NSA
N-Channel MOSFET
FEATURES
● TrenchFET Power MOSFET● Excellent RDS(on) and Low Gate Charge
● MSL: 1 Level
APPLICATIONS
● Load Switch for Portable Devices● DC/DC Converter
ABSOLUTE MAXIMUM RATINGS
Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Symbol VDS VGS ID Pulsed Drain Current (Note1) Power Dissipation Junction and Storage Temperature Range Thermal Characteristics IDM PD TJ, TSTG Parameter Maximum Junction-to-Ambient (Note2) Symbol RθJA Note: 1.Repetitive rating : Pulse width limited by junction temperature. 2.Surface mounted on FR4 board, t≤10s. PJM2300NSA N-Channel MOSFET SOT-23 1.Gate 2.Source 3.Drain Schematic diagram Drain 3 1 Gate 2 Source Marking: M02 Maximum 20 ±20 6.0 18 0.9 150, -55 to 150 Typ. 139 Units V V A W °C Units °C/W Revision 2.0 Sep-2018 1/6 PJM2300NSA N-Channel MOSFETELECTRICAL CHARACTERISTICS
(TC = 25℃) Parameter Symbol Static Parameters Co