PJM50H30NTH Description
Features Advanced Planar Process RDS(ON), typ.=150mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly Silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS PJM50H30NTH N-Channel Power MOSFET TO-3PN G DS D Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Drain-to-Source Voltage Continuous Drain Current TC=100 ℃ Pulsed Drain Current Note 1 Gate-to-Source...
PJM50H30NTH Key Features
- Advanced Planar Process
- RDS(ON), typ.=150mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Rugged Poly Silicon Gate Structure