PJM50H30NTH Overview
Key Features
- Advanced Planar Process
- RDS(ON), typ.=150mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Rugged Poly Silicon Gate Structure
| Part | PJM50H30NTH |
|---|---|
| Description | N-Channel Power MOSFET |
| Category | MOSFET |
| Manufacturer | Ping Jing |
| Size | 488.50 KB |
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