F1008 Datasheet PDF - Polyfet RF Devices RF POWER VDMOS TRANSISTOR Specs

F1008 - RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1008.

Datasheet Details

Part number	F1008
Manufacturer	Polyfet RF Devices
File Size	38.32 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1008 Datasheet
Additional preview pages of the F1008 datasheet.

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Full PDF Text Transcription

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1008 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 1.

Published: Mar 30, 2005 |