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F1020 Datasheet RF POWER VDMOS TRANSISTOR

Manufacturer: Polyfet RF Devices

Overview: polyfet rf devices General.

Datasheet Details

Part number F1020
Manufacturer Polyfet RF Devices
File Size 40.68 KB
Description RF POWER VDMOS TRANSISTOR
Download F1020 Download (PDF)

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TM "Polyfet" process

Key Features

  • gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1020.