Polyfet RF Devices F1020
RF POWER VDMOS TRANSISTOR
| Part No. | F1020 |
|---|---|
| Datasheet | F1020 Download |
| Manufacturer |  Polyfet RF Devices |
| Description | RF POWER VDMOS TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1020 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 130 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE oABSOLUTE MAXIMUM RATINGS
(TC = 25 C) DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V -65 o C to 150o C 20 A RF CHARACTERISTICS ( 130 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficienc Load Mismatch Toleranc MIN 10 60 20:1 TYP MAX UNITS dB % Relativ...