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F1027 Datasheet RF POWER VDMOS TRANSISTOR

Manufacturer: Polyfet RF Devices

Datasheet Details

Part number F1027
Manufacturer Polyfet RF Devices
File Size 40.12 KB
Description RF POWER VDMOS TRANSISTOR
Download F1027 Download (PDF)

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TM "Polyfet" process

Overview

polyfet rf devices General.

Key Features

  • gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1027.