LX703 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Polyfet RF Devices

General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Key Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

📥 Download Datasheet

LX703 silicon gate enhancement mode rf power ldmos transistor by Polyfet RF Devices - Datasheet Preview

Datasheet Details

Part number	LX703
Manufacturer	Polyfet RF Devices
File Size	37.69 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LX703 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
LX700	Service Manual	Philips
LX7001	TRANSIENT IMMUNE UNDERVOLTAGE SENSING CIRCUIT	Microsemi Corporation
LX7104	1.4MHz 1.5A Asynchronous Buck Converter	Microsemi
LX7165	5A Constant Frequency Hysteretic Synchronous Buck Regulator	Microsemi
LX7167	2.4A Step Down Converter	Microsemi

Other Datasheets by Polyfet RF Devices

Part Number	Description
LX723	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

polyfet rf devices LX703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 220 Watts Junction to Case Thermal Resistance o 0.