SR705 Datasheet PDF - Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Specs

SR705 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Datasheet Details

Part number	SR705
Manufacturer	Polyfet RF Devices
File Size	35.86 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet	SR705 Datasheet
Additional preview pages of the SR705 datasheet.

📁 Similar Datasheet

SR70 - TVS Diode Arrays (Littelfuse)

SR70 - Low Capacitance TVS Diode Array (Semtech)

SR70 - ULTRA LOW CAPACITANCE STEERING DIODE ARRAY (Protek Devices)

SR71010A - Superscalar Microprocessor (Sandcraft)

SR71040A - Superscalar Microprocessor (Sandcraft)

SR712SW - Silver Oxide Battery (Seiko)

SR716SW - Silver Oxide Battery (Seiko)

SR720 - SCHOTTKY BARRIER RECTIFIER (Shunye)

SR721SW - Silver Oxide Battery (Seiko)

SR721W - Silver Oxide Battery (Seiko)

Full PDF Text Transcription

Click to expand full text

polyfet rf devices SR705 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 410 Watts Junction to Case Thermal Resistance o 0.

Published: May 9, 2005 |