SR706 Datasheet PDF - Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Specs

SR706 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM.

Datasheet Details

Part number	SR706
Manufacturer	Polyfet RF Devices
File Size	35.63 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Datasheet	SR706 Datasheet
Additional preview pages of the SR706 datasheet.

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Full PDF Text Transcription

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polyfet rf devices SR706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style AR HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 465 Watts Junction to Case Thermal Resistance o 0.

Published: May 9, 2005 |