PDC0960X Datasheet | Potens semiconductor

100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration DDDD SSSG BVDSS 100V RDSON 17m ID 54A Features - 100V,54A, RDS(ON) =17mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available Applications - Networking - Load Switch - LED...