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PDC2603Z - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number PDC2603Z
Manufacturer Potens semiconductor
File Size 0.95 MB
Description P-Channel MOSFET
Datasheet download datasheet PDC2603Z Datasheet

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Full PDF Text Transcription

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20V P-Channel MOSFETs PDC2603Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration DDDD S S SG G D S BVDSS -20V RDSON 8m ID -60A Features  -20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.
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