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PDC2604Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,80A, RDS(ON) =3.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDC2604Z
Manufacturer Potens semiconductor
File Size 469.04 KB
Description N-Channel MOSFET
Datasheet download datasheet PDC2604Z Datasheet

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Full PDF Text Transcription

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20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDDD S S SG G D S PDC2604Z BVDSS 20V RDSON 3.5m ID 80A Features  20V,80A, RDS(ON) =3.
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