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PDC3806T Datasheet Dual N-Channel MOSFETs

Manufacturer: Potens semiconductor

Datasheet Details

Part number PDC3806T
Manufacturer Potens semiconductor
File Size 478.60 KB
Description Dual N-Channel MOSFETs
Download PDC3806T Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

30V Dual N-Channel MOSFETs PDC3806T General.

Key Features

  • 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.