Datasheet Summary
30V Dual N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Dual Pin Configuration
D2 D2 D1 D1
D1
G2 S2 S1G1
G1
G2 S1
D2 S2
BVDSS 30V
RDSON 6.5m
ID 40A
Features
- 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
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