Datasheet Details
| Part number | PDC3808V |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 581.21 KB |
| Description | N-Channel MOSFET |
| Download | PDC3808V Download (PDF) |
|
|
| Part number | PDC3808V |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 581.21 KB |
| Description | N-Channel MOSFET |
| Download | PDC3808V Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
30V N-Channel MOSFETs PDC3808V General.
| Part Number | Description |
|---|---|
| PDC3801R | N-Channel MOSFETs |
| PDC3803R | N-Channel MOSFETs |
| PDC3806T | Dual N-Channel MOSFETs |
| PDC3810H | N-Channel MOSFETs |
| PDC3810V | Dual N-Channel MOSFET |
| PDC3812V | N-Channel MOSFET |
| PDC3094X | N-Channel MOSFET |
| PDC30N15X | N-Channel MOSFETs |
| PDC3701T | N+P Dual Channel MOSFETs |
| PDC3703V | N+P Dual Channel MOSFETs |