Datasheet Summary
30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Q1 Q2
PPAK3x3 Asymmetric Dual Pin Configuration
G2S2 S2S2 G1D1D1D1
S2 S2 S2 G2
S1/D2 D1 D1 D1 D1 G1
G1
D1 G2
S1
BVDSS 30V 30V
RDSON 10.5m 10.5m
ID 19.5A 19.5A
Features
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed D2
- Halogen...