Datasheet4U Logo Datasheet4U.com

PDC4904Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 70A, RDS(ON)=5.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDC4904Z

Datasheet Details

Part number PDC4904Z
Manufacturer Potens semiconductor
File Size 719.51 KB
Description N-Channel MOSFET
Datasheet download datasheet PDC4904Z Datasheet
Additional preview pages of the PDC4904Z datasheet.

📁 Similar Datasheet

  • PDC-10-1+ - Directional Coupler (Mini-Circuits)
  • PDC0302 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0403 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0502 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0504 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0703 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0705 - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0735C - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC0745C - SMD POWER INDUCTORS (Superworld Electronics)
  • PDC2 - 32 bit Embedded ASIC Core Peripheral (Atmel)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
40V N-Channel MOSFETs PDC4904Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3X3 Pin Configuration DD D D S S SG G D S BVDSS 40V RDSON 5.5m ID 70A Features  40V, 70A, RDS(ON)=5.
Published: |