Datasheet Summary
40V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Pin Configuration
DDDD
S S SG
BVDSS 40V
RDSON 2.8m
ID 100A
Features
- 40V, 100A, RDS(ON) =2.8mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd...