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PDC4964Z - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 54A, RDS(ON) =6.5mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet preview – PDC4964Z

Datasheet Details

Part number PDC4964Z
Manufacturer Potens semiconductor
File Size 762.89 KB
Description N-Channel MOSFET
Datasheet download datasheet PDC4964Z Datasheet
Additional preview pages of the PDC4964Z datasheet.

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Full PDF Text Transcription

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Preliminary datasheet 40V N-Channel MOSFETs PDC4964Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DDD D S S SG G D S BVDSS 40V RDSON 6.5m ID 54A Features  40V, 54A, RDS(ON) =6.
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