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PDC6959X - 60V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-70A, RDS(ON) =12mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDC6959X
Manufacturer Potens semiconductor
File Size 1.13 MB
Description 60V P-Channel MOSFET
Datasheet download datasheet PDC6959X Datasheet

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Full PDF Text Transcription

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60V P-Channel MOSFETs PDC6959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. PPAK5X6 Pin Configuration D D D DD D D DD G S SSG GS S S S BVDSS -60V RDSON 12m ID -70A Features  -60V,-70A, RDS(ON) =12mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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