Potens semiconductor PDC6964X
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. PPAK5X6 Pin Configuration DDDD S SS G G D S PDC6964X BVDSS 60V RDSON 17m ID 42AFEATURES
● 60V,42A, RDS(ON) =17mΩ @VGS = 10V● Improved dv/dt capability
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting
● Quick Charger
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Sing